东京热福利视频导航|日韩无码不卡一区|成人高清手机在线|在厨房乱子伦对白一区二区|中文字幕网址导航|国产原创在线亚洲黄色大片高清无码|深爱激情五月丁香亚洲综合社区|成人在线手机视频|浮力影院成人A片|日韩限制电影在线观看

Ieee Transactions On Device And Materials Reliability
  • 數(shù)據(jù)庫收錄SCIE
  • 創(chuàng)刊年份2001年
  • 年發(fā)文量72
  • H-index63

Ieee Transactions On Device And Materials Reliability

期刊中文名:IEEE Transactions on Device and Materials ReliabilityISSN:1530-4388E-ISSN:1558-2574

該雜志國際簡稱:IEEE T DEVICE MAT RE,是由出版商Institute of Electrical and Electronics Engineers Inc.出版的一本致力于發(fā)布工程技術研究新成果的的專業(yè)學術期刊。該雜志以ENGINEERING, ELECTRICAL & ELECTRONIC研究為重點,主要發(fā)表刊登有創(chuàng)見的學術論文文章、行業(yè)最新科研成果,扼要報道階段性研究成果和重要研究工作的最新進展,選載對學科發(fā)展起指導作用的綜述與專論,促進學術發(fā)展,為廣大讀者服務。該刊是一本國際優(yōu)秀雜志,在國際上有很高的學術影響力。

基本信息:
期刊簡稱:IEEE T DEVICE MAT RE
是否OA:未開放
是否預警:
Gold OA文章占比:24.52%
出版信息:
出版地區(qū):UNITED STATES
出版周期:Quarterly
出版語言:English
出版商:Institute of Electrical and Electronics Engineers Inc.
評價信息:
中科院分區(qū):3區(qū)
JCR分區(qū):Q2
影響因子:2.5
CiteScore:4.8
雜志介紹 中科院JCR分區(qū) JCR分區(qū) CiteScore 投稿經(jīng)驗

雜志介紹

Ieee Transactions On Device And Materials Reliability雜志介紹

《Ieee Transactions On Device And Materials Reliability》是一本以English為主的未開放獲取國際優(yōu)秀期刊,中文名稱IEEE Transactions on Device and Materials Reliability,本刊主要出版、報道工程技術-ENGINEERING, ELECTRICAL & ELECTRONIC領域的研究動態(tài)以及在該領域取得的各方面的經(jīng)驗和科研成果,介紹該領域有關本專業(yè)的最新進展,探討行業(yè)發(fā)展的思路和方法,以促進學術信息交流,提高行業(yè)發(fā)展。該刊已被國際權威數(shù)據(jù)庫SCIE收錄,為該領域相關學科的發(fā)展起到了良好的推動作用,也得到了本專業(yè)人員的廣泛認可。該刊最新影響因子為2.5,最新CiteScore 指數(shù)為4.8。

本刊近期中國學者發(fā)表的論文主要有:

  • Improved Charge-Trapping Characteristics of ZrO 2 by Al Doping for Nonvolatile Memory Applications

    Author: eexdhuang

  • Prediction of NBTI Degradation in Dynamic Voltage Frequency Scaling Operations

    Author: xjli

英文介紹

Ieee Transactions On Device And Materials Reliability雜志英文介紹

The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.

中科院SCI分區(qū)

Ieee Transactions On Device And Materials Reliability雜志中科院分區(qū)信息

2023年12月升級版
綜述:
TOP期刊:
大類:工程技術 3區(qū)
小類:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 3區(qū)

PHYSICS, APPLIED
物理:應用 3區(qū)

2022年12月升級版
綜述:
TOP期刊:
大類:工程技術 3區(qū)
小類:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 3區(qū)

PHYSICS, APPLIED
物理:應用 3區(qū)

2021年12月舊的升級版
綜述:
TOP期刊:
大類:工程技術 3區(qū)
小類:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 3區(qū)

PHYSICS, APPLIED
物理:應用 3區(qū)

2021年12月基礎版
綜述:
TOP期刊:
大類:工程技術 4區(qū)
小類:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 4區(qū)

PHYSICS, APPLIED
物理:應用 4區(qū)

2021年12月升級版
綜述:
TOP期刊:
大類:工程技術 3區(qū)
小類:

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 3區(qū)

PHYSICS, APPLIED
物理:應用 3區(qū)

2020年12月舊的升級版
綜述:
TOP期刊:
大類:工程技術 3區(qū)
小類:

PHYSICS, APPLIED
物理:應用 3區(qū)

ENGINEERING, ELECTRICAL & ELECTRONIC
工程:電子與電氣 4區(qū)

中科院SCI分區(qū):是中國科學院文獻情報中心科學計量中心的科學研究成果。期刊分區(qū)表自2004年開始發(fā)布,延續(xù)至今;2019年推出升級版,實現(xiàn)基礎版、升級版并存過渡,2022年只發(fā)布升級版,期刊分區(qū)表數(shù)據(jù)每年底發(fā)布。 中科院分區(qū)為4個區(qū)。中科院分區(qū)采用刊物前3年影響因子平均值進行分區(qū),即前5%為該類1區(qū),6%~20%為2區(qū)、21%~50%為3區(qū),其余的為4區(qū)。1區(qū)和2區(qū)雜志很少,雜志質量相對也高,基本都是本領域的頂級期刊。

JCR分區(qū)(2023-2024年最新版)

Ieee Transactions On Device And Materials Reliability雜志 JCR分區(qū)信息

按JIF指標學科分區(qū)
學科:ENGINEERING, ELECTRICAL & ELECTRONIC
收錄子集:SCIE
分區(qū):Q2
排名:165 / 352
百分位:

53.3%

學科:PHYSICS, APPLIED
收錄子集:SCIE
分區(qū):Q2
排名:87 / 179
百分位:

51.7%

按JCI指標學科分區(qū)
學科:ENGINEERING, ELECTRICAL & ELECTRONIC
收錄子集:SCIE
分區(qū):Q3
排名:186 / 354
百分位:

47.6%

學科:PHYSICS, APPLIED
收錄子集:SCIE
分區(qū):Q3
排名:99 / 179
百分位:

44.97%

JCR分區(qū):JCR分區(qū)來自科睿唯安公司,JCR是一個獨特的多學科期刊評價工具,為唯一提供基于引文數(shù)據(jù)的統(tǒng)計信息的期刊評價資源。每年發(fā)布的JCR分區(qū),設置了254個具體學科。JCR分區(qū)根據(jù)每個學科分類按照期刊當年的影響因子高低將期刊平均分為4個區(qū),分別為Q1、Q2、Q3和Q4,各占25%。JCR分區(qū)中期刊的數(shù)量是均勻分為四個部分的。

CiteScore 評價數(shù)據(jù)(2024年最新版)

Ieee Transactions On Device And Materials Reliability雜志CiteScore 評價數(shù)據(jù)

  • CiteScore 值:4.8
  • SJR:0.436
  • SNIP:1.148
學科類別 分區(qū) 排名 百分位
大類:Engineering 小類:Safety, Risk, Reliability and Quality Q2 65 / 207

68%

大類:Engineering 小類:Electrical and Electronic Engineering Q2 274 / 797

65%

大類:Engineering 小類:Electronic, Optical and Magnetic Materials Q2 103 / 284

63%

歷年影響因子和期刊自引率

投稿經(jīng)驗

Ieee Transactions On Device And Materials Reliability雜志投稿經(jīng)驗

該雜志是一本國際優(yōu)秀雜志,在國際上有較高的學術影響力,行業(yè)關注度很高,已被國際權威數(shù)據(jù)庫SCIE收錄,該雜志在ENGINEERING, ELECTRICAL & ELECTRONIC綜合專業(yè)領域專業(yè)度認可很高,對稿件內容的創(chuàng)新性和學術性要求很高,作為一本國際優(yōu)秀雜志,一般投稿過審時間都較長,投稿過審時間平均 較慢,6-12周 ,如果想投稿該刊要做好時間安排。版面費不祥。該雜志近兩年未被列入預警名單,建議您投稿。如您想了解更多投稿政策及投稿方案,請咨詢客服。

免責聲明

若用戶需要出版服務,請聯(lián)系出版商:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141。